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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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MBRF1645 데이터시트(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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MBRF1645 데이터시트(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 2 page  - 116 - MBRF1635 THRU MBRF16100 Isolation 16.0 AMPS. Schottky Barrier Rectifiers Voltage Range 35 to 100 Volts Current 16.0 Amperes Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Guardring for overvoltage protection High temperature soldering guaranteed: 260 oC/10 seconds,0.25”(6.35mm)from case Mechanical Data Cases: ITO-220AC molded plastic body Terminals: Lead solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting position: Any Mounting torque: 5 in. - lbs. max Weight: 0.08 ounce, 2.24 grams ITO-220AC Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 ℃ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol MBRF 1635 MBRF 1645 MBRF 1650 MBRF 1660 MBRF 1690 MBRF 16100 Units Maximum Recurrent Peak Reverse Voltage VRRM 35 45 50 60 90 100 V Maximum RMS Voltage VRMS 24 31 35 42 63 70 V Maximum DC Blocking Voltage VDC 35 45 50 60 90 100 V Maximum Average Forward Rectified Current at Tc=125 OC I(AV) 16 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20KHz) at Tc=125 oC IFRM 32.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 150 250 A Peak Repetitive Reverse Surge Current (Note 1) IRRM 1.0 0.5 A Maximum Instantaneous Forward Voltage at: (Note 2) IF=16A, TC=25 oC IF=16A, TC=125 oC VF 0.63 0.57 0.75 0.65 0.85 0.75 V Maximum Instantaneous Reverse Current @ Tc =25 ℃ at Rated DC Blocking Voltage (Note 2) @ Tc=125 ℃ IR 0.2 40 1.0 50.0 0.2 - mA mA Voltage Rate of Change (Rated VR) dV/dt 10,000 V/uS M aximum Typical Thermal Resistance(Note 3) R θJC 3.0 ℃/W Typical Junction Capacitance Cj 560 420 pF Operating Junction Temperature Range TJ -65 to +150 ℃ Storage Temperature Range TSTG -65 to +175 ℃ Notes: 1. 2.0us Pulse Width, f=1.0 KHz 2. Pulse Test: 300us Pulse Width, 1% Duty Cycle 3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate. .071(1.8) MAX .161(4.1) .146(3.7) .118(3.00) .124(3.16) .185(4.7) .173(4.4) .272(6.9) .248(6.3) .063(1.6) MAX .100(2.55) .543(13.8) .512(13.2) .100(2.55) .110(2.8) .098(2.5) .606(15.5) .583(14.8) .112(2.85) .100(2.55) .406(10.3) .390(9.90) .134(3.4)DIA .113(3.0)DIA 2 PIN 1 PIN 2 Case Positive |
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