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FTK2007DFN23 데이터시트(PDF) 1 Page - First Silicon Co., Ltd |
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FTK2007DFN23 데이터시트(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 4 page ![]() 2015. 03. 10 1/4 SEMICONDUCTOR TECHNICAL DATA FTK2007DFN23 Revision No : 0 Dual N-Channel MOSFET DESCRIPTION The FTK2007DFN23 uses advanced trench technology to provide excellent RDS(ON) low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. MARKING: MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Para l o b m y S r e t e m Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID 7 A Pulsed Drain Current IDM * 30 A Thermal Resistance from Junction to Ambient RθJA 125 ℃/W Junction Temperature Tj 0 5 1 ℃ Storage Temperature Tstg -55~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) TL 260 ℃ *Repetitive rating:Pluse width limited by junction temperature. DFNWB2× 3-6L-C V(BR)DSS RDS(on)MAX ID 20V 20mΩ@10V 7A 22mΩ@4.5V 24mΩ@3.8V Equivalent Circuit 26mΩ@2.5V 35mΩ@1.8V |
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