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2021 Microchip Technology Inc.

DS20005695A-page 1

2N7000

Features

• Free from Secondary Breakdown

• Low Power Drive Requirement

• Ease of Paralleling

• Excellent Thermal Stability

• Integral Source-Drain Diode

• High Input Impedance and High Gain

Applications

• Motor Controls

• Converters

• Amplifiers

• Switches

• Power Supply Circuits

• Drivers (Relays, Hammers, Solenoids, Lamps,

Memory, Displays, Bipolar Transistors, etc.)

General Description

The 2N7000 is an Enhancement-mode (normally-off)

transistor that uses a vertical DMOS structure and a

well-proven silicon gate manufacturing process. This

combination produces a device with the power

handling capabilities of bipolar transistors as well as

the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of

all MOS structures, this device is free from thermal

runaway and thermally induced secondary breakdown.

Microchip’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications

where very low threshold voltage, high breakdown

voltage, high input impedance, low input capacitance,

and fast switching speeds are desired.

Package Type

See Table 3-1 for pin information.

3-lead TO-92

(Top view)

GATE

SOURCE

DRAIN

N-Channel Enhancement-Mode Vertical DMOS FET