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MSC2X31 데이터시트(PDF) 4 Page - Microsemi Corporation |
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MSC2X31 데이터시트(HTML) 4 Page - Microsemi Corporation |
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4 / 7 page ![]() Electrical Performance The following table shows the static characteristics per diode of the MSC2X31SDA120J and MSC2X30SDA120J devices. TJ = 25 °C unless otherwise specified. Table 3 • Static Characteristics Per Diode Unit Max Typ Min Test Conditions Characteristics Symbol V 1.8 1.5 IF = 30 A Forward voltage VF 2.1 TJ = 175 °C μA 200 9 VR = 1200 V Reverse leakage current IRM 150 TJ = 175 °C nC 130 VR = 600 V Total capacitive charge QC pF 141 VR = 400 V, f = 1 MHz Junction capacitance CJ 105 VR = 800 V, f = 1 MHz 4 053-4104 MSC2X31/30SDA120J Datasheet Revision A Device Specifications |
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