MILLIMETERS

INCHES

DIM

MIN

MAX

MIN

MAX

D

1.60

1.70

0.063 0.067

F

0.41

0.55

0.016 0.022

G

3.30

3.70

.130

.146

G1

2.54 REF.

.100 REF.

S

0.03 MIN.

.001 MIN.

113

6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841

PHONE (978) 620-2600

FAX (781) 689-0803

WEBSITE: http://www.microsemi.com

ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified

MAXIMUM RATINGS

Operating Temperature: -65°C to +200°C

Storage Temperature: -65°C to +200°C

Operating Current: 200 mA @ TA = + 25°C

Derating Factor: 1.14 mA/°C Above TA = + 25°C

Surge Current A: 2A, sine wave, Pw = 8.3ms

Surge Current B: 1.41A, square wave, Pw = 8.3ms

• 1N4148UR-1 AVAILABLE IN

PER MIL-PRF-19500/116

• SWITCHING DIODE

• HERMETICALLY SEALED

• METALLURGICALLY BONDED

• DOUBLE PLUG CONSTRUCTION

FIGURE 1

DESIGN DATA

CASE: DO-213AA, Hermetically sealed

glass case. (MELF, SOD-80, LL34)

LEAD FINISH: Tin / Lead

THERMAL RESISTANCE (ROJEC):

100 °C/W maximum AT L = 0

THERMAL IMPEDANCE: (ZOJX): 70

°C/W maximum

POLARITY: Cathode end is banded.

MOUNTING SURFACE SELECTION:

The Axial Coefficient of Expansion

(COE) Of this Device is Approximately

+6PPM/°C. The COE of the Mounting

Surface System Should Be Selected To

Provide A Suitable Match With This

Device.

1N4148UR-1

and

CDLL4148

I R1

I R2

I R3

I R4

CAPACITANCE

CAPACITANCE

@ 20 V dc

@ 75 V dc

@ 20 V

@ 75 V

@ 0 V

@ 1.5 V

TA = 150°C

TA = 150°C

nA

µA

µA

µA

pF

pF

25

0.5

35

75

4.0

2.8

Vf 1

Vf 2

t rr

VBR

V RWM

I0@I F = 10 mA @I F = 100 mA

(Note 1)

@100

µA

Volts

Volts (pk)

mA

V dc

V dc

n sec

100

75

200

0.8

1.2

5