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ADRF5300BCCZN-R7 데이터시트(PDF) 3 Page - Analog Devices

부품명 ADRF5300BCCZN-R7
상세설명  Silicon, SPDT Switch, Reflective, 24 GHz to 32 GHz
PDF  11 Pages
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ADRF5300BCCZN-R7 데이터시트(HTML) 3 Page - Analog Devices

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Data Sheet
ADRF5300
Rev. 0 | Page 3 of 11
SPECIFICATIONS
VDD = 3.3 V, control voltage (VCTRL) = 0 V or VDD, TCASE = 25°C, and a 50 Ω system, unless otherwise noted.
Table 1.
Parameter
Test Conditions/Comments
Min
Typ
Max
Unit
FREQUENCY RANGE
24
32
GHz
INSERTION LOSS
Between RFC and RF1 or RFC and RF2
1.1
dB
ISOLATION
Between RFC and RF1 or RFC and RF2
38
dB
Between RF1 and RF2
38
dB
RETURN LOSS
RFC, RF1 (On) and RF2 (On)
22
dB
SWITCHING CHARACTERISTICS
Rise Time (tRISE) and Fall Time (tFALL)
10% to 90% of RF output
25
ns
On Time (tON) and Off Time (tOFF)
50% VCTRL to 90% of RF output
60
ns
RF Settling Time
0.1 dB
50% VCTRL to 0.1 dB of final RF output
70
ns
0.05 dB
50% VCTRL to 0.05 dB of final RF output
80
ns
INPUT LINEARITY
f = 24 GHz to 32 GHz
0.1 dB Power Compression (P0.1dB)
37
dBm
Input Third-Order Intercept (IP3)1
Two-tone input power = 20 dBm per tone, Δf = 1 MHz
65
dBm
SUPPLY CURRENT
VDD pin
Positive Supply Current (IDD)
450
µA
DIGITAL CONTROL INPUTS
CTRL pin
Input Voltage
Low (VINL)
0
0.8
V
High (VINH)
1.2
3.3
V
Input Current
Low (IINL)
<1
µA
High (IINH)
~11
µA
RECOMMENDED OPERATING CONDITIONS
VDD
3.15
3.45
V
Digital VCTRL
0
VDD
V
RF Input (RFIN) Power2
f = 24 GHz to 32 GHz, TCASE = 85°C, input at RFC,
RF1, or RF2
Steady State Average
28
dBm
Steady State Peak
36
dBm
Hot Switching Average
28
dBm
Hot Switching Peak
36
dBm
TCASE
−40
+105
°C
1
Performance is limited by the test setup.
2
For 105°C operation, the power handling degrades from the TCASE = 85°C specification by 3 dB.
TIMING SPECIFICATIONS
See Figure 14 for the timing diagram.
Table 2.
Parameter
Description
Min
Typ
Max
Unit
tPOWERUP1
Minimum wait time after power-up
50
µs
tHOLD
Minimum control switching time
40
µs
tSLEW
Maximum control rise and fall time
10
µs
1
A maximum of 10 dBm RF input power can be applied during the tPOWERUP wait time.



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