LM1045D datasheet(2/6 Pages) LEIDITECH

2 / 6 page

Thermal Resistance

Symbol

Characterizes

Typ.

Max.

Units

RθJC

Junction-to-case③

—

1.22

℃

RθJA

Junction-to-ambient (t ≤ 10s) ④

—

6.2

℃

Electrical Characterizes @TA=25℃ unless otherwise specified

Symbol Parameter

Min.

Typ.

Max.

Units

Conditions

V(BR)DSS

Drain-to-Source breakdown voltage

-100

—

VGS = 0V, ID = -250μA

RDS(on)

Static Drain-to-Source on-resistance

—

mΩ

VGS=-10V,ID =-15A

—

VGS=- 4.5V,ID =-10A

VGS(th)

Gate threshold voltage

-1

—

-3

VDS = VGS, ID =- 250μA

IDSS

Drain-to-Source leakage current

—

-1

μA

VDS =-100V,VGS = 0V

IGSS

Gate-to-Source forward leakage

—

100

VGS =30V

—

-100

VGS = -30V

Total gate charge

—

ID = -10A,

VDS=-50V,

VGS = -10V

Qgs

Gate-to-Source charge

—

Qgd

Gate-to-Drain("Miller") charge

—

td(on)

Turn-on delay time

—

VGS=-10V, VDS=-50V,

RGEN=25Ω

ID=-5A

Rise time

—

td(off)

Turn-Off delay time

—

210

—

Fall time

—

Ciss

Input capacitance

—

7800

—

VGS = 0V

VDS = -25V

ƒ = 1MHz

Coss

Output capacitance

—

222

—

Crss

Reverse transfer capacitance

—

165

—

Source-Drain Ratings and Characteristics

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

Continuous Source Current

(Body Diode)

—

-30

MOSFET symbol

showing the

integral reverse

p-n junction diode.

ISM

Pulsed Source Current

(Body Diode)

—

-60

Diode Forward Voltage

—

-1.2

IS=-6A, VGS=0V

LM1045D

Rev :

www.leiditech.com

01.06.2018

2/6

LM1045D 데이터시트(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

LM1045D 데이터시트(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Html Pages

1 2 3 4 5 6

데이터시트 다운로드

링크 URL