LM4012 datasheet(1/6 Pages) LEIDITECH

부품명	LM4012

상세설명	N-ChannelEnhancement Mode Power MOSFET

PDF	6 Pages

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제조업체	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

홈페이지	http://www.leiditech.com

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Description：

This N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=40V,ID=12A,RDS(ON)<12mΩ@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(T

C=25℃ unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

40

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current – Continuous (TC=25℃ )

12

A

Drain Current – Continuous (TC=100℃ )

8.5

IDM

Drain Current – Pulsed

1

60

PD

Power Dissipation (TC=25℃ )

3

W

Power Dissipation – Derate above 25℃

---

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

℃

Thermal Characteristics：

Symbol

Parameter

Max

Units

RƟJC

Thermal Resistance,Junction to Case

---

℃/W

RƟJA

Thermal Resistance,Junction to Ambient

2

41.7

G4

D

S1

S

LM4012

Enhancement Mode Power MOSFET

N-Channel

Rev :

www.leiditech.com

01.06.2018

1/6

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