FTK4902DFN56 datasheet(1/5 Pages) FS

부품명	FTK4902DFN56

상세설명	40V N-Channel MOSFETs

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제조업체	FS [First Silicon Co., Ltd]

홈페이지	http://www.firstsilicon.co.kr/

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40V N-Channel MOSFETs

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

40

V

VGS

Gate-Sou

rce Voltage

± 20

V

ID

Drain Current – Continuous (TC=25℃) (Chip Limitation)

140

A

Drain Current – Continuous (TC=100℃) (Chip Limitation)

88

A

IDM

Drain Current – Pulsed

1

560

A

EAS

Single Pulse Avalanche Energy

2

360

mJ

IAS

Single Pulse Avalanche Current

2

85

A

PD

Power Dissipation (TC=25℃)

142

W

Power Dissipation – Derate above 25℃

1.14

W/℃

TSTG

Storage Temperature Range

-50 to 150

℃

TJ

Operating Junction Temperature Range

-50 to 150

℃

BVDSS

RDSON

ID

40V

2.2m

Ω

140A

Symbol

Parameter

Typ.

Max.

Unit

RθJA

Thermal Resistance Junction to ambient

---

62

℃/W

RθJC

Thermal Resistance Junction to Case

---

0.88

℃/W

These N-Channel enhancement mode power field effect

transistors are using trench DMOS technology. This

advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are

well suited for high efficiency fast switching applications.

 40V,140A, RDS(ON) =2.2m

Ω@VGS = 10V

 Improved dv/dt capability

 Fast switching

 Green Device Available

General Description

Features

Applications

Thermal Characteristics

PPAK5X6 Pin Configuration

D

G

S

D

G

S

 PowerTools

 Load Switch

 LED applications

 Motor Drive Applications

S

D

1

4

5

8

Absolute Maximum Ratings (Tc=25℃ unless otherwise noted)

SEMICONDUCTOR

TECHNICAL DATA

FTK4902DFN56

2019. 01. 28

1/5

Revision No : 0

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