40V N-Channel MOSFETs

Symbol

Parameter

Rating

Units

Drain-Source Voltage

40

V

Gate-Sou

rce Voltage

± 20

V

15

A

9.5

A

Drain Current – Pulsed

1

60

A

5.4

W

Power Dissipation – Derate above 25℃

0.043

W/℃

Storage Temperature Range

-55 to 150

℃

Operating Junction Temperature Range

-55 to 150

℃

Symbol

Parameter

Typ.

Max.

Unit

Thermal Resistance Junction to ambient

---

85

℃/W

Thermal Resistance Junction to Case

---

23

℃/W

BVDSS

RDSON

ID

40V

9m

Ω

15A

These N-Channel enhancement mode power field effect

transistors are using trench DMOS technology. This

advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are

well suited for high efficiency fast switching applications.

 40V, 15A, RDS(ON)=9m

Ω@VGS = 10V

 Improved dv/dt capability

 Fast switching

 Green Device Available

General Description

Features

Applications

 Notebook

 Load Switch

 LED applications

 Hand-Held Device

Thermal Characteristics

SOP8 Pin Configuration

D

G

S

D

D

D

D

G

S

S

S

SEMICONDUCTOR

TECHNICAL DATA

FTK4906

2018. 03. 16

1/5

Revision No : 0