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FTK4909 데이터시트(PDF) 2 Page - First Silicon Co., Ltd

부품명 FTK4909
상세설명  40V P-Channel MOSFETs
PDF  5 Pages
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제조업체  FS [First Silicon Co., Ltd]
홈페이지  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK4909 데이터시트(HTML) 2 Page - First Silicon Co., Ltd

  FTK4909 Datasheet HTML 1Page - First Silicon Co., Ltd FTK4909 Datasheet HTML 2Page - First Silicon Co., Ltd FTK4909 Datasheet HTML 3Page - First Silicon Co., Ltd FTK4909 Datasheet HTML 4Page - First Silicon Co., Ltd FTK4909 Datasheet HTML 5Page - First Silicon Co., Ltd  
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Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=
-250uA
-40
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25
℃ , ID=
-1mA
---
-0.05
---
V/
℃
IDSS
Drain-Source Leakage Current
VDS=
-40V , VGS=0V , TJ=25℃
---
---
-1
uA
VDS=
-32V , VGS=0V , TJ=125℃
---
---
-10
uA
IGSS
Gate-Source Leakage Current
VGS=
±20V , VDS=0V
---
---
±100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
VGS=
-10V , ID=-6A
---
37
45
mΩ
VGS=
-4.5V , ID=-3A
---
57
72
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID=
-250uA
-1.2
-1.6
-2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
5
---
mV/
℃
gfs
Forward Transconductance
VDS=
-10V , ID=-5A
---
7
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge3,4
VDS=
-20V , VGS=-4.5V , ID=-5A
---
8.2
16
nC
Qgs
Gate-Source Charge3,4
---
3.0
6
Qgd
Gate-Drain Charge3,4
---
2.5
5
Td(on)
Turn-On Delay Time3,4
VDD=
-20V , VGS=-10V , RG=6Ω
ID=
-1A
---
6.3
12
ns
Tr
Rise Time3,4
---
7.2
14
Td(off)
Turn-Off Delay Time3,4
---
46
80
Tf
Fall Time3,4
---
14
27
Ciss
Input Capacitance
VDS=
-25V , VGS=0V , F=1MHz
---
825
1480
pF
Coss
Output Capacitance
---
68
130
Crss
Reverse Transfer Capacitance
---
50
100
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
-6.5
A
ISM
Pulsed Source Current
---
---
-13
A
VSD
Diode Forward Voltage
VGS=0V , IS=
-1A , TJ=25℃
---
---
-1
V
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
VDD=25V,VGS=10V,L=0.1mH,IAS=25A., Starting TJ=25
℃
3.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
4.
Essentially independent of operating temperature.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Drain-Source Diode Characteristics and Maximum Ratings
40V P-Channel MOSFETs
FTK4909
2018. 09. 17
2/5
Revision No : 0



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