LMBT1501 datasheet(1/3 Pages) LEIDITECH

부품명	LMBT1501

상세설명	SOT-23 Plastic-Encapsulate Transistors

PDF	3 Pages

Scroll/Zoom	100%

제조업체	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

홈페이지	http://www.leiditech.com

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1 / 3 page

SOT-23 Plastic-Encapsulate Transistors

MAXIMUM RATINGS (TA=25

℃ unless otherwise noted)

Symbol

（符号）

Parameter

（参数名称）

Value

（额定值）

Units

（单位）

VCBO

Collector-Base Voltage （集电极-基极电压）

V

VCEO

Collector-Emitter Voltage （集电极-发射极电压）

V

VEBO

Emitter-Base Voltage （发射极-基极电压）

5

V

IC

Collector Current -Continuous （集电极电流）

A

PC

Collector Power Dissipation （耗散功率）

0.3

W

Tj

Junction Temperature （结温）

150

℃

Tstg

Storage Temperature （储存温度）

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified)

Parameter

（参数名称）

Symbol

（符号）

Test conditions

（测试条件）

MIN

（最小值）

TYP

（典型值）

MAX

（最大值）

UNIT

（单位）

Collector-base breakdown voltage

集电极

-基极击穿电压

V(BR)CBO

IC= 100μA, IE=0

V

Collector-emitter breakdown voltage

集电极

-发射极击穿电压

V(BR)CEO

IC= 1mA, IB=0

V

Emitter-base breakdown voltage

发射极

-基极击穿电压

V(BR)EBO

IE=100μA, IC=0

5

V

Collector cut-off current

集电极

-基极截止电流

ICBO

VCB=120 V , IE=0

1

μ

A

Collector cut-off current

集电极

-发射极截止电流

ICEO

VCE=120V , IB=0

10

μ

A

Emitter cut-off current

发射极

-基极截止电流

IEBO

VEB=5V , IC=0

1

μ

A

DC current gain

直流电流增益

hFE

VCE=5V, IC= 10mA

100

400

Collector-emitter saturation voltage

集电极

-发射极饱和压降

VCE(sat)

IC=50mA, IB= 5mA

0.5

V

Base-emitter saturation voltage

发射极

-基极饱和压降

VBE(sat)

IC=50mA, IB= 5mA

1

V

CLASSIFICATION OF

hFE

Range

100-200

200-300

300-400

MARKING:G1

200

0.5

200

TRANSISTOR

(NPN) FEATURES

Rev :

www.leiditech.com

01.06.2018

1/3

LMBT1501

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