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2SC2671F 데이터시트(PDF) 1 Page - Panasonic Semiconductor

부품명 2SC2671F
상세설명  Silicon NPN epitaxial planer type(For UHF band low-noise amplification)
PDF  2 Pages
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제조업체  PANASONIC [Panasonic Semiconductor]
홈페이지  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SC2671F 데이터시트(HTML) 1 Page - Panasonic Semiconductor

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1
Transistor
2SC2671(F)
Silicon NPN epitaxial planer type
For UHF band low-noise amplification
s Features
q
Low noise figure NF.
q
High gain.
q
High transition frequency fT.
s Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter
3:Collector
JEDEC:TO–92
EIAJ:SC–43A
5.0
±0.2
4.0
±0.2
0.45
+0.2
–0.1
0.45
+0.2
–0.1
1.27
1.27
2.54
±0.15
2
13
Symbol
VCBO
VCER
*
VEBO
IC
PC
Tj
Tstg
Ratings
15
14
2
80
600
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector output capacitance
Foward transfer gain
Maximum unilateral power gain
Noise figure
Second inter modulation distortion
Third inter modulation distortion
Symbol
ICBO
IEBO
hFE
fT
*
Cob
*
| S21e |
2
GUM*
NF*
IM2
*
IM3
*
Conditions
VCB = 10V, IE = 0
VEB = 1V, IC = 0
VCE = 8V, IC = 40mA
VCE = 8V, IC = 40mA, f = 800MHz
VCB = 10V, IE = 0, f = 1MHz
VCE = 8V, IC = 40mA, f = 800MHz
VCE = 8V, IC = 40mA, f = 800MHz
VCE = 8V, IC = 40mA, f = 800MHz
VCE = 8V, IC = 40mA, f1 = 200MHz
f2 = 500MHz, VO = 100dBµ/75Ω
VCE = 8V, IC = 40mA, f1 = 600MHz
f2 = 500MHz, VO = 100dBµ/75Ω
min
50
3.5
9
10
50
75
typ
150
5.5
0.8
12
13
2.0
60
86
max
1
1
300
1.5
15
3.2
Unit
µA
µA
GHz
pF
dB
dB
dB
dB
dB
*REB = 1k
Ω
*LTPD = 10%


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