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TYN610 데이터시트(PDF) 1 Page - First Silicon Co., Ltd |
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TYN610 데이터시트(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 2 page ![]() SEMICONDUCTOR TECHNICAL DATA TYN610 2016. 02. 06 1/2 Revision No : 0 Silicon Planar PNPN Thyristor (10A SCR) MAIN FEATURES Symbol value unit IT(RMS) 10 A VDRM/VRRM 600 V ITSM 100 A GENERAL DESCRIPTION .Glass passivated triacs in a plastic envelope , intended for use in applications requiring high bidirectional transient andblocking voltage capability and high thermal cycling performance. .Typical applications include motor control, industrial and domestic lighting , heating and static switching. ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) e u l a v r e t e m a r a p l o b m y s unit IT(RMS) RMS on-state current (full sine wave) D 2 PAK/TO-220 TC=107 ℃ 10 A t=10ms 100 ITSM Non repetitive surge peak on-state current (full sine wave, Tj =25 ℃) t=8.3ms 110 A IGM Peak gate current 4 A PG(AV) Average gate power dissipation Tj=125 ℃ 0.5 W Tstg Tj Storage junction temperature range Operating junction temperature range -40 to +150 -40 to +125 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Rated repetitive peak off-state/reverse voltage VDRM,VRRM ID=10 μA 600 V Rated repetitive peak off-state current IDRM, IRRM VD=6 V 0 2 10 μA On-state voltage VTM IT=23A 1.75 V 15 mA Gate trigger current IGT VD=12V RL=100 Ω 1.45 V Gate trigger voltage VGT VD=12V RL=100 Ω Holding current IH IT =100mA IG=20mA 20 mA TO-220 2. ANODE 3. GATE 1. KATHODE 1 2 3 =0.1A I T =0.1A I T 1.4 |
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