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LCE1502R 데이터시트(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

부품명 LCE1502R
상세설명  LCE N-Channel Enhancement Mode Power MOSFET
PDF  6 Pages
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제조업체  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
홈페이지  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

LCE1502R 데이터시트(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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LCE1502R
Pb Free Product
LCE N-Channel Enhancement Mode Power MOSFET
Description
The LCE1502R uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
●
VDS = 150V,ID = 2A
RDS(ON) < 300mΩ @ VGS=10V (Typ:260mΩ)
●
High density cell design for ultra low Rdson
●
Fully characterized avalanche voltage and current
●
Excellent package for good heat dissipation
Application
●
Power switching application
●
Hard switched and high frequency circuits
D
G
S
Schematic diagram
SOT-223-3L view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCE1502R
LCE1502R
SOT-223-3L
Ø330mm
12mm
2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
150
V
Gate-Source Voltage
VGS
±20
V
Drain Current-Continuous
ID
2
A
Drain Current-Pulsed
(Note 1)
IDM
6
A
Maximum Power Dissipation
PD
2
W
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient
(Note 2)
RθJA
62.5
/W
℃
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
150
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=150V,VGS=0V
-
-
1
μA
Rev : 01.06.2014
1/6
www.leiditech.com
LCE1502R
LCE1502R
LCE1502R


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