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TYN610F 데이터시트(PDF) 1 Page - First Silicon Co., Ltd

부품명 TYN610F
상세설명  Silicon Planar PNPN Thyristor (10A SCR)
PDF  2 Pages
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제조업체  FS [First Silicon Co., Ltd]
홈페이지  http://www.firstsilicon.co.kr/
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TYN610F 데이터시트(HTML) 1 Page - First Silicon Co., Ltd

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SEMICONDUCTOR
TECHNICAL DATA
TYN610F
2016. 02. 06
1/2
Revision No : 0
Silicon Planar PNPN Thyristor (10A SCR)
MAIN FEATURES
Symbol
value
unit
IT(RMS)
10
A
VDRM/VRRM
600
V
ITSM
100
A
GENERAL DESCRIPTION
Glass passivated triacs in a plastic envelope,
intended for use in applications requiring
high bidirectional transient andblocking
voltage capability and high thermal cycling performance.
Typical applications include motor control,
industrial and domestic lighting, heating and static switching.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
e
u
l
a
v
r
e
t
e
m
a
r
a
p
l
o
b
m
y
s
unit
IT(RMS)
RMS on-state current (full sine wave)
TC=107
℃
t=10ms
100
ITSM
Non repetitive surge peak on-state current (full sine wave, Tj =25
℃)
t=8.3ms
110
A
IGM
Peak gate current
4
A
PG(AV)
Average gate power dissipation
Tj=125
℃
0.5
W
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
-40 to +150
-40 to +125
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Max
Unit
Rated repetitive peak off-state/reverse voltage
VDRM,VRRM
ID=10
μA
600
V
Rated repetitive peak off-state current
IDRM, IRRM
VD=6
V
0
2
10
μA
On-state voltage
VTM
IT=23A
1.75
V
15
mA
Gate trigger current
IGT
VD=12V
RL=100
Ω
1.45
Gate trigger voltage
VGT
VD=12V
RL=100
Ω
Holding current
IH
IT =100mA IG=20mA
20
mA
TO-220F
1. KATHODE
2. ANODE
3. GATE
=0.1A
I T
=0.1A
I T
1.4
TO-220F
A
10
V
A
A
B
C
C
D
D
E
E
F
G
H
H
1 52 MAX
1 52 MAX
J
K
L
M
L
N
N
N
O
Q
R
R
1
2
3
M
DIM
MILLIMETERS
10 16
0 20
+
_
15 00
0 20
+
_
3 00
0 20
+
_
0 625±0 125
3 50 typ
0 45
0 1
+
_
3 80
0 2
+
_
13 20
0 20
+
_
2 54
0 2
+
_
4 50
0 2
+
_
6 36
0 3
+
_
2 70
0 20
+
_
2 7 typ
16 80
0 4
+
_


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