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4N60ZL-TN3-R 데이터시트(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

부품명 4N60ZL-TN3-R
상세설명  N-Channel MOSFET uses advanced trench technology
PDF  5 Pages
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제조업체  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
홈페이지  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

4N60ZL-TN3-R 데이터시트(HTML) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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—
3 —
trr
Reverse Recovery Time
4
330
---
Ns
qrr
Reverse Recovery Charge
4
2.67
---
nc
Notes:
Typical Characteristics： (T
C=25℃ unless otherwise noted)
1：Pulse width limited by maximum junction temperature
2：L=25mH, IAS=4.0A, VDD=50V, RG=25 Ω,Starting TJ=25℃
3 ： ISD ≤4.0A,di/dt ≤200A/μs,VDD≤BVDSS, Starting TJ=25℃
4：Pulse Test：Pulse Width ≤300μs,Duty Cycle≤2％
5：Essentially independent of operating temperature
On-Region Characteristics
Transfer Characteristics
24
68
10
0.1
1
10
Notes：
1.250μs pulse test
2.V
DS=40V
150℃
V
GS [V]
25℃
10
1
10
V
GS
Top
15V
10V
8V
7V
6.5V
6V
5.5V
Bottom 5V
Notes：
1. 250μs pulse test
2. T
C=25℃
V
DS [V]
VGS=0V, IS=4.0A
dIF/dt=100A/μs
On-Resistance Variation vs.
Drain Current and Gate Voltage
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
0.1
1
10
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
Notes：
1. 250μs pulse test
2. V
GS=0V
25℃
150℃
V
SD [V]
0123
456
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
Note ：T
j=25℃
V
GS=10V
I
D
[A]
V
GS=20V
4N60ZL-TN3-R



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