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6NM65L-TN3-R 데이터시트(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

부품명 6NM65L-TN3-R
상세설명  N-Channel MOSFET uses advanced trench technology
PDF  7 Pages
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제조업체  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
홈페이지  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

6NM65L-TN3-R 데이터시트(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

  6NM65L-TN3-R Datasheet HTML 1Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 6NM65L-TN3-R Datasheet HTML 2Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 6NM65L-TN3-R Datasheet HTML 3Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 6NM65L-TN3-R Datasheet HTML 4Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 6NM65L-TN3-R Datasheet HTML 5Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 6NM65L-TN3-R Datasheet HTML 6Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 6NM65L-TN3-R Datasheet HTML 7Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.  
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—
2 —
Symbol
Parameter
Max
Units
RƟJC
Thermal Resistance,Junction to Case
1
2.55
℃/W
RƟJA
Thermal Resistance,Junction to Ambient
1
75
Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
650
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=650V
---
---
1
μA
50
IGSS
Gate-Source Leakage Current
VGS=±30V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
2.5
3
3.5
V
RDS(ON)
Drain-Source On Resistance
VGS=10V,ID=2.5A
---
780
900
mΩ
GFS
Forward Transconductance
VDS=20V, ID=3A
---
4.8
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS=50V, VGS=0V, f=1MHz
---
460
pF
Coss
Output Capacitance
---
45
Crss
Reverse Transfer Capacitance
---
3.5
Switching Characteristics
td(on)
Turn-On Delay Time
VDD=380V, ID=3A,
VGS=10V,RGEN=18Ω
---
6
ns
tr
Rise Time
---
3
ns
td(off)
Turn-Off Delay Time
---
50
60
ns
tf
Fall Time
---
9
15
ns
Qg
Total Gate Charge
VGS=10V, VDS=480V,
---
10
20
nC
6NM65L-TN3-R



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