12N10G-S08-R datasheet(4/6 Pages) DOINGTER

부품명	12N10G-S08-R

상세설명	N-Channel MOSFET uses advanced trench technology

PDF	6 Pages

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Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

0.001

0.01

0.1

0.0001

0.001

0.01

0.1

100

1000

t , Pulse Width (s)

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

PDM

0.02

Duty factor = t/T

Peak Tj = PDM x Rthja + Ta

Rthja = 125℃/W

0.001

0.01

0.1

100

0.01

0.1

100

1000

V DS , Drain-to-Source Voltage (V)

T A =25

o C

Single Pulse

100us

1ms

10ms

100ms

0369

Q G , Total Gate Charge (nC)

I D =3 A

V DS =80V

200

400

600

800

1000

100

120

V DS , Drain-to-Source Voltage (V)

f=1.0MHz

C iss

C oss

C rss

Operation in this

area limited by

RDS(ON)

Fig 5. Forward Characteristic of

Fig 6. Gate Threshold Voltage v.s.

Reverse Diode

Junction Temperature

0.5

1.5

2.5

0.2

0.4

0.6

0.8

1.2

1.4

V SD , Source-to-Drain Voltage (V)

T j =25

o C

T j =150

o C

0.0

0.4

0.8

1.2

1.6

2.0

-100

-50

100

150

T j , Junction Temperature (

o C)

I D =1mA

12N10G-S08-R

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