| 전자부품 데이터시트 검색엔진 |
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12P10G-S08-R 데이터시트(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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12P10G-S08-R 데이터시트(HTML) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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3 / 4 page ![]() www.doingter.cn — 3 — Drain-Source Diode Characteristics IS Continuous Source Current VG=VD=0V , Force Current --- --- -1.8 A ISM Pulsed Source Current --- --- -3.6 A VSD Drain Diode Forward Voltage VGS=0V,IS=-1A, TJ=25℃ --- --- -1 V trr Reverse Recovery Time VR=-100V,IS=-1A, di/dt=100A/μS, TJ=25℃ --- 13 --- ns Qrr Reverse Recovery Charge --- 15 --- nC Notes: Typical Characteristics: (TC=25℃ unless otherwise noted) 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. 12P10G-S08-R |
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