19N10L-TN3-R datasheet(3/4 Pages) DOINGTER

전자부품 데이터시트 검색엔진

ALLDATASHEET.CO.KR

19N10L-TN3-R 데이터시트(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

부품명	19N10L-TN3-R

상세설명	N-Channel MOSFET uses advanced trench technology

PDF	4 Pages

Scroll/Zoom	100%

제조업체	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

홈페이지	http://www.doingter.cn/

Logo

3 / 4 page

www.doingter.cn

—

3 —

Trr

Reverse Recovery Time

---

qrr

Reverse Recovery Charge

---

121

---

Notes:

Typical Characteristics： (T

C=25℃ unless otherwise noted)

ISD=8A, VGS=0V

di/dt=1

00A/μs

① Pulse width limited by maximum allowable junction temperature

② Limited by TJmax, starting TJ = 25°C, L = 0.1mH,RG = 25

Ω, IAS = 18A, VGS =10V. Part not recommended for use above this value

③

Pulse width ≤ 300μs; duty cycle≤ 2%.

VDS, Drain -Source Voltage (V)

Fig1. Typical Output Characteristics

Tj - Junction Temperature (°C)

Fig2. VGS(TH) Voltage Vs. Temperature

Tc, Case Temperature (°C)

VGS, Gate -Source Voltage (V)

Fig3. Typical Transfer Characteristics

ID , Drain Current (A)

Fig4. On-Resistance vs. Drain Current and Gate Voltage

19N10L-TN3-R

ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ]
Alldatasheet는? \| 광고문의 \| 운영자에게 연락하기 \| 개인정보취급방침 \| 링크 투 데이터시트 \| 링크교환 \| 제조사별 검색 All Rights Reserved©Alldatasheet.com
Mirror Sites English : Alldatasheet.com \| English : Alldatasheet.net \| Chinese : Alldatasheetcn.com \| German : Alldatasheetde.com \| Japanese : Alldatasheet.jp Russian : Alldatasheetru.com \| Korean : Alldatasheet.co.kr \| Spanish : Alldatasheet.es \| French : Alldatasheet.fr \| Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com \| Polish : Alldatasheet.pl \| Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in \| Mexican : Alldatasheet.com.mx \| British : Alldatasheet.co.uk \| New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com \| icmetro.com

ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ]

Family Site : ic2ic.com | icmetro.com