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2SC3929 데이터시트(PDF) 1 Page - Panasonic Semiconductor |
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2SC3929 데이터시트(HTML) 1 Page - Panasonic Semiconductor |
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1 / 3 page ![]() 1 Transistor 2SC3929, 2SC3929A Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SA1531 and 2SA1531A s Features q Low noise voltage NV. q High foward current transfer ratio hFE. q S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 35 55 35 55 5 100 50 150 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 2SC3929 2SC3929A 2SC3929 2SC3929A s Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Noise voltage Transition frequency Symbol ICBO ICEO VCBO VCEO VEBO hFE * VCE(sat) VBE NV fT Conditions VCB = 10V, IE = 0 VCE = 10V, IB = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCE = 5V, IC = 2mA IC = 100mA, IB = 10mA VCE = 1V, IC = 100mA VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT VCB = 5V, IE = –2mA, f = 200MHz min 35 55 35 55 5 180 typ 0.7 80 max 100 1 700 0.6 1 150 Unit nA µA V V V V V mV MHz *1h FE1 Rank classification Rank R S T hFE 180 ~ 360 260 ~ 520 360 ~ 700 2SC3929 SR SS ST 2SC3929A TR TS TT Marking symbol : S(2SC3929) T(2SC3929A) Unit: mm 1:Base 2:Emitter EIAJ:SC–70 3:Collector S–Mini Type Package 2.1 ±0.1 1.25 ±0.1 0.425 0.425 1 3 2 0.2 ±0.1 Marking Symbol 2SC3929 2SC3929A 2SC3929 2SC3929A |
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