BAS716 datasheet(3/8 Pages) PHILIPS

3 / 8 page

2003 Nov 07

Philips Semiconductors

Product speciﬁcation

Low-leakage diode

BAS716

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise speciﬁed.

THERMAL CHARACTERISTICS

Notes

1. Device mounted on a FR4 printed-circuit board. Refer to SOD523 (SC-79) standard mounting conditions.

2. Soldering point of the cathode tab.

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

forward voltage

IF = 1 mA

0.77

0.9

IF = 10 mA

0.85

IF = 50 mA

0.92

1.1

IF = 150 mA

1.02

1.25

reverse current

VR = 75 V

0.2

VR = 75 V; Tj = 150 °C

VR = 100 V

0.3

−

diode capacitance

VR = 0 V; f = 1 MHz; see Fig.6

−

trr

reverse recovery time

when switched from IF = 10 mA to

IR = 10 mA; RL = 100 Ω; measured at

IR =1mA

0.6

µs

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

450

K/W

Rth j-s

thermal resistance from junction to soldering point

note 2

120

K/W

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