REVERSE VOLTGE 50V~1000V

FORWARD CURRENT 1.0AMP Surface Mount Rectifiers

MECHANICAL DATA

FEATURES

SEMICONDUCTOR

TECHNICAL DATA

S1A ~ S1M

2012. 03. 15

1/2

Revision No : 0

Peak Forward Surge Current,8.3 ms Single

Half Sine-wave Superimposed on Rated Load

(JEDEC method)

30

A

Maximum Instantaneous Forward Voltage (Note@1.0 A

1.1

V

Maximum DC Reverse Crrent @ TA=25℃

At Rated DC Blocking Voltage @ TA=125℃

5.0

50

uA

Typical Thermal Resistance (Note )

R

27

75

30

85

℃/W

Operating

J unction Temperature Range

-55to+150

℃

Storage Temperature Ranage

-55to+150

NOTE:

Measured on P.C. Board with 0.2 x 0.2” (5.0 x 5.0mm) Copper Pad Areas.

Single phase, half wave,60Hz,resistive or inductive load.

For capacitive load,derate current by 20%

Type Number

S 1A

S 1B

S 1D

S 1G

S 1J

S 1K

S 1M

UNITS

Maximum Repetitive Peak Reverse Voltage

50

100

200

400

600

800

1000

V

Maximum RMS Voltage

35

70

140

280

420

560

700

V

Maximum DC Blocking Voltage

50

100

200

400

600

800

1000

V

Maximum Average Forward Rectified Current

IF(AV)

1.0

A

Maximum Ratings And Electrical Characteristics

Metal to silicon rectifier,majority carrier conduction

Low forward voltage drop

Easy pick and place

High surge current capability

Plastic materal used carriers Underwr

Laboratory Classification 94V-0

Epitaxial construction

High temperature soldering:

260" /10 seconds at terminals

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Case: molded plastic

Terminals:Solder plated

Polarity:Indicated by cathode band

Packaging:12mm tape EIA STD RS-481

Weight:0.064gram

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DO-214AC(SMA)

Dimensions in inches and (millimeters)

.071(1.8)

.055(1.4)

.111(2.83)

.102(2.58)

.056(1.41)

.035(.90)

.203(5.15)

.195(4.95)

.103(2.61)

.078(1.99)

5°

5°

.008(.20)

.004(.10)

.161(4.10)

.156(3.95)

℃

θ