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AS4LC2M8S1 데이터시트(PDF) 20 Page - Alliance Semiconductor Corporation

부품명 AS4LC2M8S1
상세설명  3.3V 2M x 8/1M x 16 CMOS synchronous DRAM
PDF  28 Pages
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제조업체  ALSC [Alliance Semiconductor Corporation]
홈페이지  https://www.alliancememory.com
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AS4LC2M8S1 데이터시트(HTML) 20 Page - Alliance Semiconductor Corporation

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AS4LC2M8S1
AS4LC1M16S1
read interrupted by write (CL = 2, BL = 4)
To prevent bus contention, maintain a gap between data in and data out.
read interrupted by write (CL = 3, BL = 4)
To prevent bus contention, maintain a gap between data in and data out.
Burst termination
Burst operations may be terminated with a Read, Write, Burst Stop, or Precharge command. When Burst Stop is asserted during the read
cycle, burst read data is terminated and the data bus goes to High Z after CAS latency. When Burst Stop is asserted during the write cycle,
burst write data is terminated and the databus goes to High Z simultaneously.
CLK
CMD1
DQM1
DQ1
CMD2
DQM2
DQ2
CMD3
DQM3
DQ3
CMD4
DQM4
DQ4
Write data
D0
D1
D2
D3
Read data
Write data
D0
D1
D2
D3
Read data
Write data
D0
D1
D2
D3
Read data
Write data
D0
D1
D2
D3
Q0
Read data
CLK
CMD1
DQ1
CMD2
DQM2
DQ2
CMD3
DQM3
DQ3
CMD4
DQM4
DQ4
Read data
Write data
Read data
Write data
Read data
Write data
Read data
Write data
D0
D1
D2
D3
DQM1
tCCD
D0
D1
D2
D3
D0
D1
D2
D3
D0
D1
D2
D3



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