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LBAS40LT3G 데이터시트(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

부품명 LBAS40LT3G
상세설명  Schottky BARRIER DIODE
PDF  4 Pages
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제조업체  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
홈페이지  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

LBAS40LT3G 데이터시트(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

  LBAS40LT3G Datasheet HTML 1Page - Shanghai Leiditech Electronic Technology Co., Ltd LBAS40LT3G Datasheet HTML 2Page - Shanghai Leiditech Electronic Technology Co., Ltd LBAS40LT3G Datasheet HTML 3Page - Shanghai Leiditech Electronic Technology Co., Ltd LBAS40LT3G Datasheet HTML 4Page - Shanghai Leiditech Electronic Technology Co., Ltd  
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MAXIMUM RATINGS (TA = 25
°C)
Parameter
Symbol
Min.
Max.
Unit
Conditions
Continuous reverse voltage
VR
-
40
V
Continuous forward current
IF
-
120
mA
Repetitive Peak forward surge current
IFSM
-
120
mA
tp<1s;
δ<0.5
Non-repetitive peak forward current
IFSM
-
200
mA
tp<10ms
Storage temperature
Tstg
-65
+150
°C
Junction temperature
Tj
-
150
°C
Operating ambient temperature
Tamb
-65
+150
°C
DEVICE MARKING
LBAS40LT1G=B1 LBAS40-04LT1G=CB LBAS40-05LT1G=45 LBAS40-06LT1G=L2
ELECTRICAL CHARACTERISTICS(TA= 25
°C)
Parameter
Symbol
Max.
Unit
Conditions
Forward voltage(Fig.1)
V
F
400
mV
I
F=1mA
560
mv
I
F=10mA
1v
I
F=40mA
Reverse current(Fig.2 ;note1)
I
R
1
µΑ
V
R=30V
10
µAV
R=40V
Diode capacitance(Fig.4)
C
d
5
pF
f=1MHz;V
R=0
Note:
1. Pulse test:t
p=300µs;δ=0.02.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
CONDITIONS
Thermal resistance from junction to ambient
R
th j-a
500
k/w
note1
Note
1. Refer to SOT23 or SOT143B standard mounting conditions.
LBAS40-05LT1G
Rev :
www.leiditech.com
01.06.2018
2/4



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