FDR1040DFN1006 datasheet(1/5 Pages) FS

1 / 5 page

Note:

1.

Device mounted on a 1 in. ceramic PCB which spread 2 ounces of copper.

2

Operating Junction Temperature Range

Storage Temperature Range

Schottky Barrier Diode

Low Forward Voltage Drop

Very Small SMD Package

Low Voltage Rectification

High Efficiency DC/DC Conversion

Switch Mode Power Supply

Inverse Polarity Protection

Low Power Consumption Applications

Features

Marking: 4A

Applications

Front Side

SEMICONDUCTOR

TECHNICAL DATA

FDR1040DFN1006

2021. 01. 08

1/5

Revision No : 0

Maximum Ratings

Electrical Characteristics

유사한 부품 번호 - FDR1040DFN1006

제조업체	부품명	데이터시트	상세설명
First Silicon Co., Ltd	FDR1020E	569Kb / 4P	SCHOTTKY BARRIER DIODE

제조업체	부품명	데이터시트	상세설명
NXP Semiconductors	1PS74SB43	49Kb / 8P	Schottky barrier diode 1999 Dec 10
NXP Semiconductors	1PS79SB62	56Kb / 8P	Schottky barrier diode 2001 Jan 18
Vishay Siliconix	BAS85	51Kb / 4P	Schottky Barrier Diode 01-Apr-99
Vishay Siliconix	BAS86	51Kb / 4P	Schottky Barrier Diode 01-Apr-99
Diodes Incorporated	BAT46	49Kb / 1P	SCHOTTKY BARRIER DIODE DS11002 Rev. E-2
Diodes Incorporated	SD103A	66Kb / 3P	SCHOTTKY BARRIER DIODE DS11009 Rev. 11 - 2
ON Semiconductor	NSR0230P2T5G	42Kb / 3P	Schottky Barrier Diode October, 2006 ??Rev. 0
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Shindengen Electric Mfg...	DF20NC15	641Kb / 2P	Schottky Barrier Diode