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UTT12P10L-TN3-R 데이터시트(PDF) 5 Page - VBsemi Electronics Co.,Ltd |
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UTT12P10L-TN3-R 데이터시트(HTML) 5 Page - VBsemi Electronics Co.,Ltd |
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5 / 9 page ![]() TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Single Pulse Avalanche Current Capability vs. Time 1 10 100 Time (s) T J = 150 °C T J = 25 °C 10-3 10-2 10-1 10-4 10-6 10-5 Safe Operating Area 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 100 ms Limited by RDS(on)* BVDSS Limited 1ms 100 μs 10 ms 1s,10s,DC VDS - Drain-to-Source Voltage (V) *V GS > minimum VGS at which RDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Case 10-3 10-2 0 1 1 10-1 10-4 0.2 0.1 Duty Cycle = 0.5 Square Wave Pulse Duration (s) 1 0.1 0.05 Single Pulse 0.02 E-mail:China@VBsemi TEL:86-755-83251052 www.VBsemi.tw UTT12P10L-TN3-R 5 |
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