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2SC4152 데이터시트(PDF) 1 Page - Panasonic Semiconductor |
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2SC4152 데이터시트(HTML) 1 Page - Panasonic Semiconductor |
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1 / 3 page ![]() 1 Power Transistors 2SC4152 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching s Features q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Satisfactory linearity of foward current transfer ratio hFE q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (T C=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCER VCEO VEBO ICP IC PC Tj Tstg Ratings 1400 1400 700 5 1.0 0.3 20 2 150 –55 to +150 Unit V V V V A A W ˚C ˚C TC=25°C Ta=25 °C s Electrical Characteristics (T C=25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time Symbol ICBO IEBO VCER VCEO VEBO hFE VCE(sat) VBE(sat) fT Cob ton tstg tf Conditions VCB = 1100V, IE = 0 VEB = 4V, IC = 0 IC = 1mA, RBE = 100Ω IC = 1mA, IB = 0 IE = 1mA, IC = 0 VCE = 5V, IC = 30mA IC = 60mA, IB = 6mA IC = 60mA, IB = 6mA VCE = 10V, IC = 30mA, f = 1MHz VCB = 100V, IE = 0, f = 1MHz IC = 0.15A, IB1 = 15mA, IB2 = –30mA, VCC = 250V min 1400 700 5 10 typ 12 6 max 10 10 40 2 2 2 3 1 Unit µA µA V V V V V MHz pF µs µs µs Unit: mm 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 10.0 ±0.2 5.5 ±0.2 0.5 +0.2 –0.1 1.4 ±0.1 1.3 ±0.2 0.8 ±0.1 2.54 ±0.25 5.08 ±0.5 2 13 2.7 ±0.2 4.2 ±0.2 φ3.1±0.1 |
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