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FTK4906DFN56 데이터시트(PDF) 2 Page - First Silicon Co., Ltd

부품명 FTK4906DFN56
상세설명  40V N-Channel MOSFETs
PDF  5 Pages
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제조업체  FS [First Silicon Co., Ltd]
홈페이지  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK4906DFN56 데이터시트(HTML) 2 Page - First Silicon Co., Ltd

  FTK4906DFN56 Datasheet HTML 1Page - First Silicon Co., Ltd FTK4906DFN56 Datasheet HTML 2Page - First Silicon Co., Ltd FTK4906DFN56 Datasheet HTML 3Page - First Silicon Co., Ltd FTK4906DFN56 Datasheet HTML 4Page - First Silicon Co., Ltd FTK4906DFN56 Datasheet HTML 5Page - First Silicon Co., Ltd  
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Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
40
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25
℃ , ID=1mA
---
0.03
---
V/
℃
IDSS
Drain-Source Leakage Current
VDS=40V , VGS=0V , TJ=25
℃
---
---
1
uA
VDS=32V , VGS=0V , TJ=85
℃
---
---
10
uA
IGSS
Gate-Source Leakage Current
VGS=
±20V , VDS=0V
---
---
±100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V , ID=15A
---
6.5
8.5
mΩ
VGS=4.5V , ID=8A
---
9
12
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.2
1.6
2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-5
---
mV/
℃
gfs
Forward Transconductance
VDS=10V , ID=10A
---
13
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge3 , 4
VDS=20V , VGS=10V , ID=10A
---
19.7
30
nC
Qgs
Gate-Source Charge3 , 4
---
2.8
4.2
Qgd
Gate-Drain Charge3 , 4
---
5.1
7.6
Td(on)
Turn-On Delay Time3 , 4
VDD=15V, VGS=10V , RG=3.3Ω
ID=1A
---
13.2
25
ns
Tr
Rise Time3 , 4
---
2.2
5
Td(off)
Turn-Off Delay Time3 , 4
---
72
130
Tf
Fall Time3 , 4
---
4.5
10
Ciss
Input Capacitance
VDS=25V , VGS=0V , F=1MHz
---
1278
2200
pF
Coss
Output Capacitance
---
135
250
Crss
Reverse Transfer Capacitance
---
87
170
Rg
Gate resistance
VGS=0V, VDS=0V, F=1MHz
---
2.2
---
Ω
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
70
A
ISM
Pulsed Source Current
---
---
140
A
VSD
Diode Forward Voltage
VGS=0V , IS=1A , TJ=25
℃
---
---
1
V
trr
Reverse Recovery Time
VGS=0V,IS=1A , dI/dt=100A/µs
TJ=25
℃
---
17
---
ns
Qrr
Reverse Recovery Charge
---
2.8
---
nC
Electrical Characteristics (TJ=25℃ , unless otherwise noted)
Drain-Source Diode Characteristics and Maximum Ratings
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
VDD=25V,VGS=10V,L=0.1mH,IAS=39A.,RG=25Ω
,Starting TJ=25℃.
3.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
4.
Essentially independent of operating temperature.
40V N-Channel MOSFETs
2019. 11. 28
2/5
Revision No : 0
FTK4906DFN56



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