HM5N90 datasheet(4/10 Pages) HMSEMI

4 / 10 page

Tc , Case Temperature , C

100

125

150

120

Characteristics Curve：

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

Rectangular Pulse Duration,Seconds

Vds , Drain-to-Source Voltage , Volts

0.01

0.1

100

10000

1000

Figure 2 Maximun Power Dissipation vs Case Temperature

Figure 5 Maximum Effective Thermal Impendance , Junction to Case

Figure 4 Typical Output Characteristics

Figure 3 Maximum Continuous Drain Current vs Case Temperature

Figure 1 Maximun Forward Bias Safe Operating Area

100μs

1ms

10ms

VGS=10V

VGS=6V

VGS=7V

VGS=8V

VGS=9V

PDM

NOTES：

DUTY FACTOR ：D=t1/ t2

PEAK Tj=PDM*ZthJC*RthJC+TC

50%

20%

10%

Single pulse

Tc , Case Temperature ,C

100

125

150

1.2

2.4

3.6

4.8

OPERATION IN THIS AREA

MAY BE LIMITED BY RDS(ON)

TJ=MAX RATED

TC=25℃ Single Pulse

HM5N90

Silicon N-Channel Power MOSFET

P ag e 4 of 10

Shenzhen H&M Semiconductor Co.Ltd

http：//www.hmsemi.com

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