Static Drain-source On-

resistance

1.8

Ω

Drain-Source Breakdown

Voltage

600

V

Power MOSFET Drain

Leakage Current

1

uA

HV JFET

JFET current

Drain of JFET to

GND 40v

5

9

13

mA

JFET Drain to Source

600

V

JFET shut down

Leakage Current

45

uA

Thermal Regulation Section

Thermal Regulation

Temperature

140

℃

Note 3: production testing of the chip is performed at 25 C.

Note 4: the maximum and minimum parameters specified are guaranteed by test, the typical value are guaranteed by design, characteriza tion and statistical

analysis

Power MOSFET

FC2338

2019. 10. 02

6/9

Revision No : 0

Electrical Characteristics (Con.)