SM2001CSK datasheet(1/9 Pages) DOINGTER

부품명	SM2001CSK

상세설명	N-Channel and P-Channel MOSFET uses advanced trench technology

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제조업체	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

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Description：

This N-Channel and P-Channel MOSFET useadvanced trench

Tech nol ogy To provide excellent RDS(ON)，low gate charge.

This device may be usedto form a level shifted high side switch,

and for a host ofotherapplication.

Features：

N-Channel:V DS=20V,ID=6.8A,RDS(ON)<17mΩ@VGS=4.5V

P-Channel: V DS=-30V,ID=-5.1A,RDS(ON)<55@VGS=-10

1) Low gate charge.

2) Green device available.

3) Advanced high cell denity trench technology for ultra RDS(ON).

4) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(T

A=25℃ unless otherwise noted)

Symbol

Parameter

N-Channel

P-Channel

Units

VDS

Drain-Source Voltage

20

-30

V

VGS

Gate-Source Voltage

±10

±20

V

ID

Continuous Drain Current

6.8

-5.1

A

Continuous Drain Current

1

26

-20

PD

Power Dissipation

2

2.5

W

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

℃

Thermal Characteristics：

Symbol

Parameter

N-CH

P-CH

Units

RƟJA

Thermal Resistance,Junction to Ambient

2

62.5

℃/W

G2

D1

D2

S1

G1

S2

SM 2001CSK

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