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DRDN005W 데이터시트(PDF) 3 Page - Diodes Incorporated

부품명 DRDN005W
상세설명  COMPLEX ARRAY FOR RELAY DRIVERS
PDF  9 Pages
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DRDN005W 데이터시트(HTML) 3 Page - Diodes Incorporated

  DRDN005W Datasheet HTML 1Page - Diodes Incorporated DRDN005W Datasheet HTML 2Page - Diodes Incorporated DRDN005W Datasheet HTML 3Page - Diodes Incorporated DRDN005W Datasheet HTML 4Page - Diodes Incorporated DRDN005W Datasheet HTML 5Page - Diodes Incorporated DRDN005W Datasheet HTML 6Page - Diodes Incorporated DRDN005W Datasheet HTML 7Page - Diodes Incorporated DRDN005W Datasheet HTML 8Page - Diodes Incorporated DRDN005W Datasheet HTML 9Page - Diodes Incorporated  
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DS30573 Rev. 8 - 2
3 of 9
DRD (xxxx) W
www.diodes.com
Electrical Characteristics, DRDN010W NPN Transistor @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
DC Current Gain
hFE
150
800
IC = 100mA, VCE = 1V
Collector-Emitter Saturation Voltage
VCE(SAT)
0.5
V
IC = 300mA, IB = 30mA
Collector-Base Breakdown Voltage
V(BR)CBO
45
V
IC = 100
µA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
18
V
IC = 1mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
5
V
IE = 100
µA, IC = 0
Collector Cutoff Current
ICBO
1
µA
VCB = 40V, IE = 0
Emitter Cutoff Current
IEBO
1
µA
VEB = 4V, IC = 0
Current Gain-Bandwidth Product
fT
100
MHz
VCE = 10V, IC = 50mA, f = 100MHz
Capacitance
Cobo
8
pF
VCB = 10V, IE = 0, f = 1MHz
Characteristic
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
80
V
IC = 100
µA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
80
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
4.0
V
IE = 100
µA, IC = 0
Collector Cutoff Current
ICBO
100
nA
VCB = 60V, IE = 0
VCB = 80V, IE = 0
Collector Cutoff Current
ICES
100
nA
VCE = 60V, IBO = 0V
VCE = 80V, IBO = 0V
DC Current Gain
hFE
100
IC = 10mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
0.25
V
IC = 100mA, IB = 10mA
Base-Emitter Saturation Voltage
VBE(SAT)
1.2
V
IC = 100mA, VCE = 1.0V
Current Gain-Bandwidth Product
fT
100
MHz
VCE = 2.0V, IC = 10mA,
f = 100MHz
Electrical Characteristics, DRDN005W NPN Transistor @ TA = 25°C unless otherwise specified
Electrical Characteristics, DRDP006W PNP Transistor @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
DC Current Gain
hFE
100
300
IC = -150mA, VCE = -10V
Collector-Emitter Saturation Voltage
VCE(SAT)
-0.4
V
IC = -150mA, IB = -15mA
Collector-Base Breakdown Voltage
V(BR)CBO
-60
V
IC = -10
µA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-60
V
IC = -10mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5
V
IE = -10
µA, IC = 0
Collector Cutoff Current
ICBO
-10
nA
VCB = -50V, IE = 0
Current Gain-Bandwidth Product
fT
200
MHz
VCE = -20V, IC = -50mA, f = 100MHz
Capacitance
Cobo
8
pF
VCB = -10V, IE = 0, f = 1MHz
Electrical Characteristics, DRDNB16W Pre-Biased NPN Transistor @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Input Voltage
Vl(off)
0.3
V
VCC = 5V, IO = 100
µA
Vl(on)
2.0
V
VO = 0.3V, IO = 20mA
Output Voltage
VO(on)
0.3V
V
IO/Il = 50mA/2.5mA
Input Current
Il
7.2
mA
VI = 5V
Output Current
IO(off)
0.5
µA
VCC = 50V, VI = 0V
DC Current Gain
Gl
56
VO = 5V, IO = 50mA
Gain-Bandwidth Product
fT
200
MHz
VCE = 10V, IE = 5mA,
f = 100MHz



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