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2SC547 데이터시트(PDF) 1 Page - Panasonic Semiconductor

부품명 2SC547
상세설명  Silicon NPN epitaxial planer type(For low-voltage low-noise high-frequency oscillation)
PDF  2 Pages
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제조업체  PANASONIC [Panasonic Semiconductor]
홈페이지  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SC547 데이터시트(HTML) 1 Page - Panasonic Semiconductor

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Transistors
1
2SC5472
Silicon NPN epitaxial planer type
For low-voltage low-noise high-frequency oscillation
I Features
• High transition frequency f
T
• High gain of 8.2 dB and low noise of 1.8 dB at 3 V
• Optimum for RF amplification of a portable telephone and pager
• S-mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I Absolute Maximum Ratings T
a = 25°C
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
9V
Collector to emitter voltage
VCEO
6V
Emitter to base voltage
VEBO
1V
Collector current
IC
30
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Marking Symbol: 3A
Unit: mm
1.3±0.1
0.3
+0.1
–0.0
2.0±0.2
1
3
2
(0.65) (0.65)
0.15
+0.10
–0.05
10
°
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = 9 V, IE = 01
µA
Emitter cutoff current
IEBO
VEB
= 1 V, I
C
= 01
µA
Forward current transfer ratio
hFE
VCE
= 3 V, I
C
= 10 mA
80
200
Transition frequency
fT
VCE = 3 V, IC = 10 mA, f = 2 GHz
12.0
GHz
Collector output capacitance
Cob
VCB
= 3 V, I
E
= 0, f = 1 MHz
0.6
0.9
pF
Forward transfer gain
| S
21e
| 2
VCE
= 3 V, I
C
= 10 mA, f = 2 GHz
6.0
8.0
dB
Noise figure
NF
VCE = 3 V, IC = 3 mA, f = 1.5 GHz
1.8
3.0
dB
I Electrical Characteristics T
a = 25°C ± 3°C
1: Base
2: Emitter
EIAJ: SC-70
3: Collector
S-Mini Type Package


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