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ISCN263W 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

부품명 ISCN263W
상세설명  isc N-Channel MOSFET Transistor
PDF  2 Pages
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCN263W 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited

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1
isc N-Channel MOSFET Transistor
ISCN263W
FEATURES
·
Drain Current –ID= 20A@ TC=25℃
·
Drain Source Voltage-
: VDSS= 650V(Min)
·
Static Drain-Source On-Resistance
: RDS(on) = 215mΩ(Max)
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·
Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage-Continuous
±
20
V
ID
Drain Current-Continuous
20
A
IDM
Drain Current-Single Pluse
50
A
PD
Total Dissipation @TC=25℃
147
W
TJ
Max. Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150
℃
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.85
℃
/W


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