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STP413D 데이터시트(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

부품명 STP413D
상세설명  P-Channel MOSFET uses advanced trench technology
PDF  4 Pages
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제조업체  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
홈페이지  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

STP413D 데이터시트(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=-250μA
-40
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=-40V
---
---
-1
μA
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=-250μA
-1.1
-1.7
-2.5
V
RDS(ON)
Drain-Source On Resistance
VGS=-10V,ID=-20A
---
15
21
mΩ
VGS=-4.5V,ID=-15A
---
21
32
GFS
Forward Transconductance
VDS =-5V, ID=-5A
15
---
---
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS=-20V, VGS=0V, f=1MHz
---
2050
---
pF
Coss
Output Capacitance
---
260
---
Crss
Reverse Transfer Capacitance
---
150
---
Switching Characteristics
td(on)
Turn-On Delay Time
VDS=-20V, RL=1.6Ω
RGEN=3Ω, VGS=-10V
---
10
---
ns
tr
Rise Time
---
24
---
ns
td(off)
Turn-Off Delay Time
---
40
---
ns
tf
Fall Time
---
9
---
ns
Qg
Total Gate Charge
VGS=-10V, VDS=-20V,
ID=-8A
---
45
---
nC
Qgs
Gate-Source
Charge
---
6
---
nC
Qgd
Gate-Drain “Miller” Charge
---
11
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
VGS=0V,IS=-10A,
---
---
-1.2
V
STP413D



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