2SC5597 datasheet(1/2 Pages) PANASONIC

부품명	2SC5597

상세설명	Silicon NPN triple diffusion mesa type(For horizontal deflection output)

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제조업체	PANASONIC [Panasonic Semiconductor]

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Power Transistors

1

2SC5597

Silicon NPN triple diffusion mesa type

For horizontal deflection output

I Features

• High breakdown voltage, and high reliability through the use of a

glass passivation layer

• High-speed switching

• Wide area of safe operation (ASO)

I Absolute Maximum Ratings T

C = 25°C

Unit: mm

Parameter

Symbol

Rating

Unit

Collector to base voltage

VCBO

1 700

V

Collector to emitter voltage

VCES

1 700

V

VCEO

600

V

Emitter to base voltage

VEBO

7V

Peak collector current

ICP

30

A

Collector current

IC

22

A

Base current

IB

11

A

Collector power

TC

= 25°CP

C

200

W

dissipation

Ta

= 25°C

3.5

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

I Electrical Characteristics T

C = 25°C ± 3°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector cutoff current

ICBO

VCB = 1 000 V, IE = 050

µA

VCB

= 1 700 V, I

E

= 01

mA

Emitter cutoff current

IEBO

VEB

= 7 V, I

C

= 050

µA

Forward current transfer ratio

hFE

VCE = 5 V, IC = 11 A

6

12

Collector to emitter saturation voltage

VCE(sat)

IC

= 11 A, I

B

= 2.75 A

3

V

Base to emitter saturation voltage

VBE(sat)

IC

= 11 A, I

B

= 2.75 A

1.5

V

Transition frequency

fT

VCE = 10 V, IC = 0.1 A, f = 0.5 MHz

3

MHz

Storage time

tstg

IC

= 11 A, Resistance loaded

3.0

µs

Fall time

tf

IB1

= 2.75 A, I

B2

= −5.5 A

0.2

µs

20.0±0.5

2.0±0.3

3.0±0.3

1.0±0.2

5.45±0.3

10.9±0.5

123

(1.5)

5.0±0.3

φ 3.3±0.2

(1.5)

2.7±0.3

0.6±0.2

(3.0)

1: Base

2: Collector

3: Emitter

TOP-3L Package

Internal Connection

B

C

E

Marking Symbol: C5597

유사한 부품 번호 - 2SC5597

제조업체	부품명	데이터시트	상세설명
Panasonic Semiconductor	2SC5597	164Kb / 11P	Horizontal Deflection Transistor Series for TV

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