SWK4441 datasheet(3/4 Pages) DOINGTER

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SWK4441 데이터시트(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

부품명	SWK4441

상세설명	P-Channel MOSFET uses advanced trench technology

PDF	4 Pages

Scroll/Zoom	100%

제조업체	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

홈페이지	http://www.doingter.cn/

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3 / 4 page

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Continuous Source Current

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-3.2

LSM

Pulsed Source Current

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-6.4

Notes:

Typical Characteristics： (T

C=25℃ unless otherwise noted)

VG=VD=0V , Force Current

Repetitive Rating : Pulsed width limited by maximum junction temperature.

VDD=-25V,VGS=-10V,L=0.1mH,IAS=-18A.,RG=25,Starting TJ=25℃.

The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.

Essentially independent of operating temperature.

TJ , Junction Temperature (℃)

Fig.1 Continuous Drain Current vs. TJ

TJ , Junction Temperature (℃)

Fig.2 Normalized RDSON vs. TJ

TJ , Junction Temperature (℃)

Fig.3 Normalized Vth vs. TJ

Qg , Gate Charge (nC)

Fig.4 Gate Charge Waveform

SWK4441

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