SWK4532 datasheet(1/8 Pages) DOINGTER

부품명	SWK4532

상세설명	N-Channel and P-Channel MOSFET useadvanced trench Technology

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제조업체	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

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Description：

This N-Channel and P-Channel MOSFET use advanced trench

Technology To provide excellent RDS(ON)，low gate charge.

This device may be usedto form a level shifted high side switch,

and for a host of other application.

Features：

1) N-Channel:V DS=30V,ID= 6A,RDS(ON)<32mΩ@VGS=10V

P-Channel: V DS=-30V,ID=-6A,RDS(ON)<65mΩ@VGS=-10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(T

C=25℃ unless otherwise noted)

Symbol

Parameter

N-Channel

P-Channel

Units

VDS

Drain-Source Voltage

30

-30

V

VGS

Gate-Source Voltage

±12

V

ID

Continuous Drain Current- Tj=150℃

6

-6

A

Continuous Drain Current-TC=70℃

5.8

-5

±30

A

PD

Power Dissipation Ta=25℃

2

W

Pulsed Drain Current Ta=25℃

1.44

℃/ W

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

℃

Thermal Characteristics：

Symbol

Parameter

N-Channel

P-Channel

Units

G2

D1

D2

S1

G1

S2

℃/W

RƟJA

Thermal Resistance,Junction to Ambient

110

IDM

Pulsed Drain Current

A

B

A

SWK4532

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SWK4532 데이터시트(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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