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SWK9926 데이터시트(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

부품명 SWK9926
상세설명  Dual N-Channel MOSFET uses advanced trench technology
PDF  4 Pages
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제조업체  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
홈페이지  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

SWK9926 데이터시트(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

  SWK9926 Datasheet HTML 1Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SWK9926 Datasheet HTML 2Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SWK9926 Datasheet HTML 3Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SWK9926 Datasheet HTML 4Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.  
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2 —
Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
20
---
---
V
IDSS
Drain-Source Leakage Current
VDS=16V , VGS=0V ,TJ=25℃
---
---
1
uA
IGSS
Gate-Source Leakage Current
VGS=±10V, VDS=0V
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
0.5
1
1.5
V
RDS(ON)
Static Drain-Source On Resistance
VGS=4.5V,ID=6.5A
---
19
24
mΩ
VGS=2.5V,ID=5.4A
---
23
30
GFS
Forward Transconductance
VDS=5V, ID=3A
---
11
---
S
Dynamic Characteristics
4
Ciss
Input Capacitance
VDS=10V, VGS=0V, f=1MHz
---
700
---
pF
Coss
Output Capacitance
---
175
---
Crss
Reverse Transfer Capacitance
---
85
---
Switching Characteristics
td(on)
Turn-On Delay Time
2,3
VDS=10V, ID=1A,
RGEN=6Ω, VGS=4.5V
---
8
16
ns
tr
Rise Time
2,3
---
10
18
ns
td(off)
Turn-Off Delay Time
2,3
---
18
29
ns
tf
Fall Time
2,3
---
5
10
ns
Qg
Total Gate Charge
2,3
VGS=4.5V, VDS=10V,
ID=3A
---
7
10
nC
Qgs
Gate-Source
Charge
2,3
---
1.2
---
nC
Qgd
Gate-Drain “Miller” Charge
2,3
---
.9
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
2
VGS=0V,IS=1.3A,TJ=25℃
---
---
1.2
V
SWK9926



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