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SWP3710 데이터시트(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

부품명 SWP3710
상세설명  N-Channel MOSFET uses advanced trench technology
PDF  3 Pages
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제조업체  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
홈페이지  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

SWP3710 데이터시트(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

  SWP3710 Datasheet HTML 1Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SWP3710 Datasheet HTML 2Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SWP3710 Datasheet HTML 3Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.  
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Forward On Voltage
www.doingter.cn
—
2 —
Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
100
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=100V
---
---
10
μA
VGS=0V, VDS=100V,Tj=125℃
---
---
250
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±0.2
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
2
---
4
V
RDS(ON)
Drain-Source On Resistance
VGS=10V,ID=1A
---
18
22
mΩ
GFS
Forward Transconductance
VDS=15V, ID=10A,
---
---
25
S
VSD
---
---
1.3
V
Dynamic Characteristics
Ciss
Input Capacitance
VDS=25V, VGS=0V, f=1MHz
---
2900
---
pF
Coss
Output Capacitance
---
290
---
Crss
Reverse Transfer Capacitance
---
150
---
Switching Characteristics
td(on)
Turn-On Delay Time
VDD=50V, ID=35A,
RGEN=6.8Ω.VGS=10V
---
17
---
ns
tr
Rise Time
---
77
---
ns
td(off)
Turn-Off Delay Time
---
41
---
ns
tf
Fall Time
---
56
---
ns
VGS=0V
IS=35A
TJ=25℃
---
Δ
ID=1A
SWP3710



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