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FTK7N70PD 데이터시트(PDF) 2 Page - First Silicon Co., Ltd

부품명 FTK7N70PD
상세설명  7 Amps, 700 Volts N-CHANNEL MOSFET
PDF  7 Pages
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제조업체  FS [First Silicon Co., Ltd]
홈페이지  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK7N70PD 데이터시트(HTML) 2 Page - First Silicon Co., Ltd

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ABSOLUTE MAXIMUM RATINGS (TC = 25˚C, unless otherwise specified)
PARAMET
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
700
V
VDSS
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 1)
IAR
7.0
A
TC = 25°C
7.0
A
Continuous Drain Current
TC = 100°C
ID
4.7
Pulsed Drain Current (Note 1)
IDM
28
A
Single Pulse(Note 2)
EAS
530
mJ
Avalanche Energy
Repetitive Limited by TJ(MAX)
EAR
14.2
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
TC = 25°C
156 / 48
W
Power Dissipation (TO-220,TO-263/ TO-220F)
Derate above 25°C
PD
1.25 / 0.38
W / ˚C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
UNIT
62.5
Junction-to-Ambient
θJA
1.18
Junction-to-Case
TO-220, TO-263
θJc
˚C / W
ELECTRICAL CHARACTERISTICS
(TC
=25˚C , unless Otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
UNIT
OFF CHARACTERISTICS
700
V
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
VDS = 700V, VGS = 0V
10
µ
A
Drain-Source Leakage Current
IDSS
Forward
VGS = 30V, VDS = 0V
100
nA
Gate-Body Leakage Current
Reverse
IGSSF
VGS = -30V, VDS = 0V
-100
nA
Breakdown Voltage Temperature Coefficient ΔBVDSS / ΔTJ ID = 250
µ
A, Referenced to
25°C
0.7
V / ˚C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250µA
2.0
4.0
V
Static Drain-Source On-Resistance
RDS(ON)
VGS = 10V, ID = 3.5A
1.7
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
1200
pF
Output Capacitance
COSS
150
pF
Reverse Transfer Capacitance
CRSS
VDS = 25V, VGS = 0V,
f = 1.0MHz
18
pF
2016. 05. 10
2/7
Revision No : 0
Junction Temperature
TJ
+150
˚C
TSTG
-55 ~ +150
˚C
MAX
Operating and Storage Temperature
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
VDD = 350V, ID = 7.0A
, RG = 25Ω
(Note 4,5)
ns
Turn-On Rise Time
tR
79
ns
Turn-Off Fall Time
tF
52
ns
Total Gate Charge
QG
30
nC
Gate-Source Charge
QGS
VDS= 560V,ID= 7.0A
VGS = 10V
(Note 4,5)
6.5
nC
Turn-Off Delay Time
Gate-Drain Charge
QGD
13
nC
tD(OFF)
MIN
TYP
MAX
Forward Transconductance
gFS
VDS = 40V, ID = 3.5A (Note 4)
8.0
S
IGSSR
35
80
ns
TO-220F
2.6
θJc
FTK7N70P/F/DD



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