UF830L-TN3-R datasheet(1/5 Pages) DOINGTER

부품명	UF830L-TN3-R

상세설명	N-Channel MOSFET uses advanced trench technology

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Description：

This N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=500V,ID=4A,RDS(ON)<1.4Ω@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(T

C=25℃ unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

500

V

VGS

Gate-Source Voltage

±30

V

ID

Continuous Drain Current-TC=25℃

4

A

Continuous Drain Current-TC=100℃

2.4

Pulsed Drain Current

1

16

EAS

Single Pulse Avalanche Energy

1

300

mJ

PD

Power Dissipation,

TC=25℃

2.5

W

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

℃

Thermal Characteristics：

Symbol

Parameter

Max

Units

RƟJC

Thermal Resistance,Junction to Case

2.6

℃/W

RƟJA

Thermal Resistance,Junction to Ambient

50*

D

S

G

* When mounted on the minimum pad size recommended (PCB Mount)

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