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UT4232G-S08-R 데이터시트(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

부품명 UT4232G-S08-R
상세설명  Dual N-Channel MOSFET uses advanced trench technology
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제조업체  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
홈페이지  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

UT4232G-S08-R 데이터시트(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
30
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=30V
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±100
nA
On Characteristics
3
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
1
1.6
3
V
RDS(ON)
Drain-Source On Resistance
VGS=4.5V,ID=7A
---
18
23
mΩ
GFS
Forward Transconductance
VDS=5V, ID=5A
3
5.8
---
S
Dynamic Characteristics
4
Ciss
Input Capacitance
VDS=15V, VGS=0V, f=1MHz
---
560
---
pF
Coss
Output Capacitance
---
125
---
Crss
Reverse Transfer Capacitance
---
90
---
Switching Characteristics
4
td(on)
Turn-On Delay Time
VDS=15V, RL =15Ω
RGEN=2.5Ω. VGS=10V,,
ID=5.5A
---
10
---
ns
tr
Rise Time
---
4
---
ns
td(off)
Turn-Off Delay Time
---
27
---
ns
tf
Fall Time
---
5
---
ns
Qg
Total Gate Charge
VGS=4.5V, VDS=10V,
ID=7A
---
16
---
nC
Qgs
Gate-Source
Charge
---
1.7
---
nC
Qgd
Gate-Drain “Miller” Charge
---
6.8
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
1
VGS=0V,IS=1A
---
0.78
1.2
V
lsD
---
---
5.8
A
Source-Drain Current(Body Diode)
Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
UT4232G-S08-R



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