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UT4446G-S08-R 데이터시트(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

부품명 UT4446G-S08-R
상세설명  N-Channel MOSFET uses advanced trench technology
PDF  4 Pages
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제조업체  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
홈페이지  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

UT4446G-S08-R 데이터시트(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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2 —
Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
30
33
---
V
IDSS
Drain-Source Leakage Current
VDS=30V , VGS=0V ,TJ=25℃
---
---
1
uA
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0V
---
---
±100
nA
On Characteristics
3
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
1
1.6
3
V
RDS(ON)
Static Drain-Source On Resistance
VGS=10V,ID=10A
---
10
13
mΩ
VGS=4.5V,ID=5A
---
13
18
GFS
Forward Transconductance
VDS=5V, ID=10A
15
---
---
S
Dynamic Characteristics
4
Ciss
Input Capacitance
VDS=15V, VGS=0V, f=1MHz
---
1550
---
pF
Coss
Output Capacitance
---
300
---
Crss
Reverse Transfer Capacitance
---
180
---
Switching Characteristics
4
td(on)
Turn-On Delay Time
2,3
VDS=25V, ID=1A,
RGEN=6Ω, VGS=10V
---
30
---
ns
tr
Rise Time
2,3
---
200
---
ns
td(off)
Turn-Off Delay Time
2,3
---
100
---
ns
tf
Fall Time
2,3
---
80
---
ns
Qg
Total Gate Charge
2,3
VGS=5V, VDS=15V,
ID=10A
---
13
---
nC
Qgs
Gate-Source
Charge
2,3
---
5.5
---
nC
Qgd
Gate-Drain “Miller” Charge
2,3
---
3.5
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
3
VGS=0V,IS=10A,TJ=25℃
---
---
1.2
V
IS
Continuous Source Current
2
---
---
10
A
Notes:
UT4446G-S08-R



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