| 전자부품 데이터시트 검색엔진 |
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BAS516 데이터시트(PDF) 2 Page - Toshiba Semiconductor |
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BAS516 데이터시트(HTML) 2 Page - Toshiba Semiconductor |
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2 / 5 page ![]() BAS516 2 4. 4. 4. 4. Electrical Characteristics (Unless otherwise specified, T Electrical Characteristics (Unless otherwise specified, T Electrical Characteristics (Unless otherwise specified, T Electrical Characteristics (Unless otherwise specified, Taaaa = 25 = 25 = 25 = 25 )))) Characteristics Forward voltage Reverse current Total capacitance Reverse recovery time Symbol VF (1) VF (2) VF (3) VF (4) IR (1) IR (2) Ct trr Test Condition IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA VR = 25 V VR = 80 V VR = 0 V, f = 1 MHz IF = 10 mA, See Fig. 4.1. Min Typ. 0.35 Max 0.715 0.855 1.00 1.25 30 200 3.0 Unit V nA pF ns Fig. Fig. Fig. Fig. 4.1 4.1 4.1 4.1 Reverse recovery time (t Reverse recovery time (t Reverse recovery time (t Reverse recovery time (trr rr rr rr ) Test circuit ) Test circuit ) Test circuit ) Test circuit 5. 5. 5. 5. Marking Marking Marking Marking 6. 6. 6. 6. Land Pattern Dimensions (for reference only) Land Pattern Dimensions (for reference only) Land Pattern Dimensions (for reference only) Land Pattern Dimensions (for reference only) Land Pattern Dimensions (Unit: mm) Land Pattern Dimensions (Unit: mm) Land Pattern Dimensions (Unit: mm) Land Pattern Dimensions (Unit: mm) 2016-10-20 Rev.1.0 ©2016 Toshiba Corporation |
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