BAV99

1

Switching Diodes Silicon Epitaxial Planar

BAV99

BAV99

BAV99

BAV99

Start of commercial production

2016-08

1.

1.

1.

1. Applications

Applications

Applications

Applications

•

Ultra-High-Speed Switching

2.

2.

2.

2. Packaging and Internal Circuit

Packaging and Internal Circuit

Packaging and Internal Circuit

Packaging and Internal Circuit

SOT23

1: Anode 1

2: Cathode 2

3: Cathode 1/Anode 2

3.

3.

3.

3. Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

= 25

= 25

= 25 





))))

Characteristics

Peak reverse voltage

Reverse voltage

Peak forward current

Average rectified current

Non-repetitive peak forward surge current

Power dissipation

Junction temperature

Storage temperature

Symbol

Note

(Note 1)

(Note 2)

(Note 3)

(Note 4)

Rating

100

100

500

215

2

150

320

150

-55 to 150

Unit

V

mA

mA

A

mW



Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Unit rating. Total rating = Unit rating × 40%

Note 2: Unit rating. Total rating = Unit rating × 55%

Note 3: Measured with a 10 ms pulse.

2016-10-20

Rev.1.0

©2016 Toshiba Corporation