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UT6898G-S08-R 데이터시트(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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UT6898G-S08-R 데이터시트(HTML) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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1 / 4 page ![]() www.doingter.cn — 1 — Description: This Dual N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features: 1) VDS=20V,ID=12A,RDS(ON)<11mΩ@VGS=4.5V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings:(T C=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±10 V ID Continuous Drain Current- 12 A Pulsed Drain Current 1 45 PD Power Dissipation 2 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics: Symbol Parameter Max Units RƟJA Thermal Resistance,Junction to Ambient 2 62.5 ℃/W G2 D1 D1 D2 D2 S1 G1 S2 UT6898G-S08-R |
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