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UTA10R220HG-S08-R 데이터시트(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

부품명 UTA10R220HG-S08-R
상세설명  N-Channel MOSFET uses advanced trench technology
PDF  4 Pages
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제조업체  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
홈페이지  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

UTA10R220HG-S08-R 데이터시트(HTML) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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—
3 —
Symbol
Parameter
Conditions
Min
Typ
Max
Units
VSD
Source-Drain Diode Forward Voltage
3
VGS=0V,IS=8A
---
---
1.3
V
LS
Continuous Source Current
---
---
32
A
LSp
Pulsed Source Current
---
---
1.3
Trr
Reverse Recovery Time
---
50.2
---
NS
Qrr
Reverse Recovery Charge
---
95.1
---
BC
Notes:
Typical Characteristics： (T
C=25℃ unless otherwise noted)
IS=8 A,
di/dt=100 A/μs
VGS<Vth
1)
Calculated continuous current based on maximum allowable junction temperature.
2)
Repetitive rating; pulse width limited by max. junction temperature.
3)
Pd is based on max. junction temperature, using junction-case thermal resistance.
4)
The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with Ta=25 ℃.
5)
VDD=50 V, RG=25 Ω, L=0.3 mH, starting Tj=25 ℃.
UTA10R220HG-S08-R



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